新闻与活动 活动信息

物理主题学术讲座Physics Seminar | Shen Lai: High-k Dielectrics in Two-Dimensional Material Field-Effect Transistors

时间

2025年7月18日(周五)
下午14:00-15:30

地点

云谷校区E10-215教室

主持

西湖大学理学院PI 王乃舟 博士

受众

全体师生

分类

学术与研究

物理主题学术讲座Physics Seminar | Shen Lai: High-k Dielectrics in Two-Dimensional Material Field-Effect Transistors

时间: 2025718日(周五)下午14:00-15:30

Time: 14:00-15:30, Friday, July 18, 2025

主持人: 西湖大学理学院PI 王乃舟 博士

Host: Dr. Naizhou Wang, PI of School of Science, Westlake University

地址:云谷校区E10-215教室

Venue: E10-215, Yungu Campus

讲座语言:中文

Lecture Language: Chinese


赖屾 助理教授

澳门大学

Shen Lai

Assistant Professor, University of Macau


主讲人/Speaker:

Prof. Shen LAI achieved his Ph.D. degree in Nano Engineering from Sungkyunkwan University, Korea in 2018 and he worked as a research fellow at Nanyang Technological University, Singapore, from 2018 to 2022. He is currently an assistant professor in Institute of Applied Physics and Materials Engineering, University of Macau in Macau, China. He has published more than 30 articles in the field of 2D materials transport properties and devices.


讲座摘要/Abstract:

Developing van der Waals (vdW) high-k dielectric layers is a key factor in achieving high-performance two-dimensional (2D) semiconductor field effect transistors (FETs). Here, we experimentally reveal that layered GaPS4 flakes exhibit a high dielectric constant of up to 35 and a high capacitance density (~2.95μF/cm²), along with a bandgap larger than 4.15eV. Band alignment of MoS2/GaPS4 heterostructure indicates a unipolar-like barrier between MoS2 and GaPS4 for electrons of ~1.92 eV. We employed GaPS4 as gate dielectric with an equivalent oxide thickness (EOT) of 1 nm in a MoS2 FET, and the device shows a low gate leakage current of 10-13A, a high on/off ratio of ~3×108, and minimal hysteresis (~20mV). Theoretical modeling confirms that weak interactions preserve the MoS2 channel’s inherent electronic properties. Compared to other layered dielectrics, GaPS4 in MoS2 FETs demonstrates superior properties in terms of bandgap, dielectric constant, EOT and on/off ratio. These advantages highlight the potential of GaPS4 for integration into 2D semiconductor FETs.


讲座联系人/Contact:

School of Science, Shaowei Ma, Email: mashaowei@westlake.edu.cn