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工学院专题学术讲座 | Wenrui Zhang: 超宽禁带氧化镓半导体外延与电子器件研究 Thin Film Epitaxy and Electronic Devices of Ultrawide-Bandgap Gallium Oxide

时间

2024年12月6日(周五)
14:00-15:30

地点

西湖大学云谷校区E10-305

主持

西湖大学工学院 陆启阳 博士

受众

全体师生

分类

工学院专题学术讲座 | Wenrui Zhang: 超宽禁带氧化镓半导体外延与电子器件研究 Thin Film Epitaxy and Electronic Devices of Ultrawide-Bandgap Gallium Oxide

时间:2024年12月6日(周五) 14:00-15:30

Time: 14:00-15:30, Friday, December 6, 2024

地点西湖大学云谷校区E10-305

Venue: E10-305, Yungu Campus

主持人: 西湖大学工学院 陆启阳 博士

Host: Dr. Qiyang Lu, Assistant Professor, Westlake University

语言:中文

Language: Chinese

主讲嘉宾/Speaker:

Dr. Wenrui Zhang 张文瑞

Ningbo Institute of Materials Technology and Engineering,

Chinese Academy of Sciences


主讲人简介/Biography:

张文瑞,中国科学院宁波材料所研究员,博士生导师。2015年获得美国德州农工大学材料科学与工程博士学位,随后分别在美国布鲁克海文国家实验室和橡树岭国家实验室从事博士后研究,2020年加入中科院宁波材料所工作。研究聚焦功能氧化物薄膜的精准制备与载流子输运调控,以推动氧化物半导体在信息能源领域的发展与应用。近年来着力提升氧化镓等宽禁带半导体薄膜的外延技术和载流子输运调控能力,实现了氧化镓薄膜的晶相调控、高效掺杂和高性能整流结设计,用于研发新一代功率电子器件与深紫外光电探测器件。已承担国家高层次青年人才项目,国家自然科学基金、浙江省自然科学基金和宁波市科技创新团队等项目,在Adv. Funct. Mater., ACS Nano, ACS Energy Lett., IEEE EDL和Appl. Phys. Lett.等学术期刊上发表论文100余篇,其中第一及通讯作者论文40余篇,论文被引4500余次,H指数36,申请/授权发明专利10余项。

讲座摘要/Abstract:

Gallium oxide (Ga2O3) is an emerging ultrawide bandgap semiconductor that has broad application in the field of new-generation information technology. The epitaxial growth of gallium oxide thin films with tunable transport properties is the basis for fabricating high-performance electronic devices. However, synthesis-induced defects and mixed phases usually compromise the device performance. To address this problem, we have systematically investigated phase control, composition tuning and transport properties of gallium oxide thin films. In combination with substrate orientation and extrinsic doping, we have examined the crystallization behavior of different metastable polymorphs, and selectively stabilized phase-pure β-, α- and ε-gallium oxide thin films over the heterogeneous sapphire substrate. The dopant selection and activation in gallium oxide thin films are further examined, and a wide range of conductivity modulation is achieved. Two types of kilovoltage-level Ga2O3-based power diodes are designed and presented. Finally, the influence of defect distribution on photocarrier transport in gallium oxide films is discussed, in an effort to achieve directional carrier transport and collection for high-performance deep ultraviolet photodetectors.

讲座联系人/Contact:

朱云云

zhuyunyun@westlake.edu.cn